SI7478DP-T1 Specs and Replacement
Type Designator: SI7478DP-T1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 470 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 typ Ohm
Package: DFN5X6
SI7478DP-T1 substitution
- MOSFET ⓘ Cross-Reference Search
SI7478DP-T1 datasheet
si7478dp-t1.pdf
SI7478DP-T1 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.006 at VGS = 10 V 80 Material categorization 60 0.007 at VGS = 4.5 V 65 D DFN5X6 Top View Top View Bottom View 1 8 2 7 G 3 6 4 5 PIN1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 2... See More ⇒
si7478dp.pdf
Si7478DP Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0075 at VGS = 10 V 20 TrenchFET Power MOSFET 60 0.0088 at VGS = 4.5 V New Low Thermal Resistance PowerPAK 18.5 Package with Low 1.07 mm Profile 100 % Rg Tested PowerPAK SO-8 S 6.15 mm 5.15 mm ... See More ⇒
si7476dp.pdf
Si7476DP Vishay Siliconix N-Channel 40-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0053 at VGS = 10 V 25 TrenchFET Power MOSFET 40 0.0066 at VGS = 4.5 V 23 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PowerPAK SO-8 D S 6.15 mm 5.15 mm 1 S ... See More ⇒
Detailed specifications: SI4944DY, SI4947DY, SI4948BEY-T1-E3, SI4953ADY-T1-E3, SI4953DY-T1-E3, SI6423DQ-T1, SI6435ADQ-T1, SI6913DQ-T1, AO4407, SI9410BDY-T1, SI9933ADY, SI9948AEY-T1-E3, SI9955DY, SIR422DP-T1-GE3, SIR462DP-T1, SIR802DP-T1-GE3, SM2300NSAC
Keywords - SI7478DP-T1 MOSFET specs
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