SI7478DP-T1 - аналоги, параметры транзистора - Справочник транзисторов

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SI7478DP-T1 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.006 at VGS = 10 V 80 Material categorization 60 0.007 at VGS = 4.5 V 65 D DFN5X6 Top View Top View Bottom View 1 8 2 7 G 3 6 4 5 PIN1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 2

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Si7478DP Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0075 at VGS = 10 V 20 TrenchFET Power MOSFET 60 0.0088 at VGS = 4.5 V New Low Thermal Resistance PowerPAK 18.5 Package with Low 1.07 mm Profile 100 % Rg Tested PowerPAK SO-8 S 6.15 mm 5.15 mm

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Si7476DP Vishay Siliconix N-Channel 40-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0053 at VGS = 10 V 25 TrenchFET Power MOSFET 40 0.0066 at VGS = 4.5 V 23 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PowerPAK SO-8 D S 6.15 mm 5.15 mm 1 S

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