SI9410BDY-T1 MOSFET Datasheet: N-Ch, 20V, 10A. Full specification with pinout and replacement list

SI9410BDY-T1 Specs and Replacement

Type Designator: SI9410BDY-T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 typ Ohm

Package: SO8

SI9410BDY-T1 substitution

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SI9410BDY-T1 datasheet

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SI9410BDY-T1 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch... See More ⇒

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SMD Type MOSFET N-Channel MOSFET SI9410DY (KI9410DY) SOP-8 Features VDS (V) = 30V ID = 7 A (VGS = 10V) 1.50 0.15 RDS(ON) 30m (VGS = 10V) RDS(ON) 40m (VGS = 5V) 1 Source 5 Drain RDS(ON) 50m (VGS = 4.5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sou... See More ⇒

Detailed specifications: SI4947DY, SI4948BEY-T1-E3, SI4953ADY-T1-E3, SI4953DY-T1-E3, SI6423DQ-T1, SI6435ADQ-T1, SI6913DQ-T1, SI7478DP-T1, BS170, SI9933ADY, SI9948AEY-T1-E3, SI9955DY, SIR422DP-T1-GE3, SIR462DP-T1, SIR802DP-T1-GE3, SM2300NSAC, SM3113NSUC