SI9933ADY Datasheet and Replacement
Type Designator: SI9933ADY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 215 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
Package: SO8
SI9933ADY substitution
SI9933ADY Datasheet (PDF)
si9933ady.pdf
SI9933ADYwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vi
Datasheet: SI4948BEY-T1-E3 , SI4953ADY-T1-E3 , SI4953DY-T1-E3 , SI6423DQ-T1 , SI6435ADQ-T1 , SI6913DQ-T1 , SI7478DP-T1 , SI9410BDY-T1 , 10N65 , SI9948AEY-T1-E3 , SI9955DY , SIR422DP-T1-GE3 , SIR462DP-T1 , SIR802DP-T1-GE3 , SM2300NSAC , SM3113NSUC , SM4028NSUC-TRG .
History: IRF6217 | SSF2418EBK | RU20P3C | BLV4N60 | TPA120R800A
Keywords - SI9933ADY MOSFET datasheet
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History: IRF6217 | SSF2418EBK | RU20P3C | BLV4N60 | TPA120R800A
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