All MOSFET. SI9948AEY-T1-E3 Datasheet

 

SI9948AEY-T1-E3 Datasheet and Replacement


   Type Designator: SI9948AEY-T1-E3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.054(typ) Ohm
   Package: SO8
      - MOSFET Cross-Reference Search

 

SI9948AEY-T1-E3 Datasheet (PDF)

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SI9948AEY-T1-E3

SI9948AEY-T1-E3www.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25

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SI9948AEY-T1-E3

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SI9948AEY-T1-E3

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SI9948AEY-T1-E3

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N6802JANTXV | SI4448DY | SI4804CDY | 2N6961A | 2N7002KU | SI4634DY | IRFZ44NPBF

Keywords - SI9948AEY-T1-E3 MOSFET datasheet

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 SI9948AEY-T1-E3 substitution
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