SI9948AEY-T1-E3 PDF and Equivalents Search

 

SI9948AEY-T1-E3 Specs and Replacement

Type Designator: SI9948AEY-T1-E3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.054 typ Ohm

Package: SO8

SI9948AEY-T1-E3 substitution

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SI9948AEY-T1-E3 datasheet

 0.1. Size:869K  cn vbsemi
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SI9948AEY-T1-E3

SI9948AEY-T1-E3 www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 ... See More ⇒

 6.1. Size:218K  vishay
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SI9948AEY-T1-E3

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 9.1. Size:240K  vishay
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SI9948AEY-T1-E3

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 9.2. Size:265K  vishay
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SI9948AEY-T1-E3

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Detailed specifications: SI4953ADY-T1-E3, SI4953DY-T1-E3, SI6423DQ-T1, SI6435ADQ-T1, SI6913DQ-T1, SI7478DP-T1, SI9410BDY-T1, SI9933ADY, IRFP250, SI9955DY, SIR422DP-T1-GE3, SIR462DP-T1, SIR802DP-T1-GE3, SM2300NSAC, SM3113NSUC, SM4028NSUC-TRG, SM4307PSKPC

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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