All MOSFET. FDB050AN06A0 Datasheet

 

FDB050AN06A0 Datasheet and Replacement


   Type Designator: FDB050AN06A0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 61 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO263 D2PAK
 

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FDB050AN06A0 Datasheet (PDF)

 ..1. Size:564K  fairchild semi
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FDB050AN06A0

February 2003FDB050AN06A0 / FDP050AN06A0N-Channel PowerTrench MOSFET60V, 80A, 5mFeatures Applications rDS(ON) = 4.3m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 61nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pul

 ..2. Size:901K  onsemi
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FDB050AN06A0

FDP050AN06A0 / FDB050AN06A0N-Channel PowerTrench MOSFET60 V, 80 A, 5 mFeatures RDS(on) = 4.3 m ( Typ.) @ VGS = 10 V, ID = 80 A Applications QG(tot) = 61 nC ( Typ.) @ VGS = 10 V Synchronous Rectification for ATX / Server / Telecom PSU Low Miller Charge Battery Protection Circuit Low Qrr Body Diode Motor drives and Uninterruptible Power Supplies

Datasheet: FDB035AN06A0 , FDB035N10A , STU407D , FDB039N06 , FDB045AN08A0 , FDB045AN08A0F085 , FDB047N10 , STU405DH , IRFB4110 , FDB060AN08A0 , FDB070AN06A0 , FDB075N15A , FDB082N15A , FDB088N08 , FDB110N15A , FDB120N10 , STU407DH .

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