SP8K1TB PDF and Equivalents Search

 

SP8K1TB Specs and Replacement

Type Designator: SP8K1TB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 typ Ohm

Package: SO8

SP8K1TB substitution

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SP8K1TB datasheet

 ..1. Size:2178K  cn vbsemi
 sp8k1tb.pdf pdf_icon

SP8K1TB

SP8K1TB www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box ... See More ⇒

Detailed specifications: SIR462DP-T1, SIR802DP-T1-GE3, SM2300NSAC, SM3113NSUC, SM4028NSUC-TRG, SM4307PSKPC, SM4927BSKC, SM4953KC, IRF2807, SP8M3-TB, SPD09N05, SPN2054T252RG, SPN2302S23R, SPN3414S23RGB, SPN4412WS8RG, SPN4436S8R, SPN6561S26RGB

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