SPN6561S26RGB PDF and Equivalents Search

 

SPN6561S26RGB Specs and Replacement

Type Designator: SPN6561S26RGB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 typ Ohm

Package: TSOP6

SPN6561S26RGB substitution

- MOSFET ⓘ Cross-Reference Search

 

SPN6561S26RGB datasheet

 ..1. Size:881K  cn vbsemi
 spn6561s26rgb.pdf pdf_icon

SPN6561S26RGB

SPN6561S26RGB www.VBsemi.tw Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.022 at VGS = 4.5 V TrenchFET Power MOSFET 6.0 20 1.8 nC 100 % Rg Tested 0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/EC TSOP-6 D1 D 2 D Top View G1 D1 1 6 ... See More ⇒

 9.1. Size:351K  syncpower
 spn65t10.pdf pdf_icon

SPN6561S26RGB

SPN65T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS DC/DC Converter The SPN65T10 is the N-Channel enhancement mode Load Switch power field effect transistor which is produced using high SMPS Secondary Side Synchronous Rectifier cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devic... See More ⇒

Detailed specifications: SP8K1TB, SP8M3-TB, SPD09N05, SPN2054T252RG, SPN2302S23R, SPN3414S23RGB, SPN4412WS8RG, SPN4436S8R, IRFB31N20D, SPP3414S23RG, SPP6506S26R, SPP6507S26RGB, SPP80N03S2L, SQ9407EY-T1, SSC8022GS6, SSM2307G, ST2300S23RG

Keywords - SPN6561S26RGB MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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