SPP6506S26R MOSFET Datasheet: P-Ch, 20V, 3.6A. Full specification with pinout and replacement list

SPP6506S26R Specs and Replacement

Type Designator: SPP6506S26R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 typ Ohm

Package: TSOP6

SPP6506S26R substitution

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SPP6506S26R datasheet

..1. Size:1504K cn vbsemi
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SPP6506S26R www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET - 20 2.7 nC 0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable... See More ⇒

8.1. Size:956K cn vbsemi
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SPP6507S26RGB www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET - 20 2.7 nC 0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portab... See More ⇒

Detailed specifications: SPD09N05, SPN2054T252RG, SPN2302S23R, SPN3414S23RGB, SPN4412WS8RG, SPN4436S8R, SPN6561S26RGB, SPP3414S23RG, IRF1405, SPP6507S26RGB, SPP80N03S2L, SQ9407EY-T1, SSC8022GS6, SSM2307G, ST2300S23RG, ST2302MSRG, STD10NF06