All MOSFET. SQ9407EY-T1 Datasheet

 

SQ9407EY-T1 Datasheet and Replacement


   Type Designator: SQ9407EY-T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 334 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.050(typ) Ohm
   Package: SO8
 

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SQ9407EY-T1 Datasheet (PDF)

 ..1. Size:1487K  cn vbsemi
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SQ9407EY-T1

SQ9407EY-T1www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 100 % Rg and UIS testedRDS(on) () at VGS = -10 V 0.050RDS(on) () at VGS = -4.5 V 0.060ID (A) per leg -8SSO-8S1 8 DGS D2 7S3 6 DG D4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARA

 6.1. Size:258K  vishay
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SQ9407EY-T1

SQ9407EYwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 60 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.085 AEC-Q101 QualifiedcRDS(on) () at VGS = - 4.5 V 0.115 100 % Rg and UIS TestedID (A) - 4.6 Compliant to RoHS Directive 2

Datasheet: SPN3414S23RGB , SPN4412WS8RG , SPN4436S8R , SPN6561S26RGB , SPP3414S23RG , SPP6506S26R , SPP6507S26RGB , SPP80N03S2L , STP65NF06 , SSC8022GS6 , SSM2307G , ST2300S23RG , ST2302MSRG , STD10NF06 , STD30PF03 , STD60NF3L , STD95NH02L .

History: 3N172 | SSL60R190SFD | J175 | WML07N65C2 | SSU70R750S | IXFA26N30X3 | CS16N65FA9H

Keywords - SQ9407EY-T1 MOSFET datasheet

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