All MOSFET. SQ9407EY-T1 Datasheet

 

SQ9407EY-T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ9407EY-T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 43.4 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 334 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.050(typ) Ohm
   Package: SO8

 SQ9407EY-T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ9407EY-T1 Datasheet (PDF)

 ..1. Size:1487K  cn vbsemi
 sq9407ey-t1.pdf

SQ9407EY-T1 SQ9407EY-T1

SQ9407EY-T1www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 100 % Rg and UIS testedRDS(on) () at VGS = -10 V 0.050RDS(on) () at VGS = -4.5 V 0.060ID (A) per leg -8SSO-8S1 8 DGS D2 7S3 6 DG D4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARA

 6.1. Size:258K  vishay
 sq9407ey.pdf

SQ9407EY-T1 SQ9407EY-T1

SQ9407EYwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 60 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.085 AEC-Q101 QualifiedcRDS(on) () at VGS = - 4.5 V 0.115 100 % Rg and UIS TestedID (A) - 4.6 Compliant to RoHS Directive 2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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