STT8205S Specs and Replacement
Type Designator: STT8205S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 typ Ohm
Package: TSOP6
STT8205S substitution
- MOSFET ⓘ Cross-Reference Search
STT8205S datasheet
stt8205s.pdf
STT8205S www.VBsemi.tw Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.022 at VGS = 4.5 V TrenchFET Power MOSFET 6.0 20 1.8 nC 100 % Rg Tested 0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/EC TSOP-6 D1 D 2 D Top View G1 D1 1 6 G 1 ... See More ⇒
Detailed specifications: SSC8022GS6, SSM2307G, ST2300S23RG, ST2302MSRG, STD10NF06, STD30PF03, STD60NF3L, STD95NH02L, MMIS60R580P, SUD08P06-155, SUD08P06-155L-E3, SUD10P06-280L, SUD40N08, SUP75N08-10, SUU50N06-07L, TN0200K-T1, TN0200TS
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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