All MOSFET. STT8205S Datasheet

 

STT8205S Datasheet and Replacement


   Type Designator: STT8205S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022(typ) Ohm
   Package: TSOP6
 

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STT8205S Datasheet (PDF)

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STT8205S

STT8205Swww.VBsemi.twDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.022 at VGS = 4.5 V TrenchFET Power MOSFET6.020 1.8 nC 100 % Rg Tested0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/ECTSOP-6 D1 D 2 D Top View G1 D1 1 6 G 1

Datasheet: SSC8022GS6 , SSM2307G , ST2300S23RG , ST2302MSRG , STD10NF06 , STD30PF03 , STD60NF3L , STD95NH02L , 2N7002 , SUD08P06-155 , SUD08P06-155L-E3 , SUD10P06-280L , SUD40N08 , SUP75N08-10 , SUU50N06-07L , TN0200K-T1 , TN0200TS .

History: SMK0260I | IRF1405PBF | MTA340N02KC3 | SUN05A50ZF | MDP1723 | FMC12N60ES | WMO07N60C4

Keywords - STT8205S MOSFET datasheet

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