SUU50N06-07L Specs and Replacement
Type Designator: SUU50N06-07L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 570 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.010 typ Ohm
Package: TO251
SUU50N06-07L substitution
- MOSFET ⓘ Cross-Reference Search
SUU50N06-07L datasheet
suu50n06-07l.pdf
SUU50N06-07L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 55 Material categorization 60 0.012 at VGS = 4.5 V 47 TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Sy... See More ⇒
suu50n03.pdf
SUU50N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_CMOSFET PRODUCT SUMMARY VDS (V) rDS(on) ( ) ID (A)a, b 0.007 @ VGS =10V 25 30 30 0.010 @ VGS =4.5V 18 TO-251 D G and DRAIN-TAB G D S S Top View Order Number N-Channel MOSFET SUU50N03-07 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-Source... See More ⇒
Detailed specifications: STD60NF3L, STD95NH02L, STT8205S, SUD08P06-155, SUD08P06-155L-E3, SUD10P06-280L, SUD40N08, SUP75N08-10, IRF730, TN0200K-T1, TN0200TS, TP0101TS-T1, TPCA8036, UT100N03L, UT2301G-AE3-R, UT2302G-AE3, UT2302L-AE3
Keywords - SUU50N06-07L MOSFET specs
SUU50N06-07L cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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