SUU50N06-07L Datasheet and Replacement
Type Designator: SUU50N06-07L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 570 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.010(typ) Ohm
Package: TO251
SUU50N06-07L substitution
SUU50N06-07L Datasheet (PDF)
suu50n06-07l.pdf
SUU50N06-07Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 55 Material categorization:600.012 at VGS = 4.5 V 47TO-251DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Sy
suu50n03.pdf
SUU50N03-07Vishay SiliconixN-Channel 30-V (D-S) 175_CMOSFETPRODUCT SUMMARYVDS (V) rDS(on) () ID (A)a, b0.007 @ VGS =10V 2530300.010 @ VGS =4.5V 18TO-251DGand DRAIN-TABG D SSTop ViewOrder Number: N-Channel MOSFETSUU50N03-07ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-Source
Datasheet: STD60NF3L , STD95NH02L , STT8205S , SUD08P06-155 , SUD08P06-155L-E3 , SUD10P06-280L , SUD40N08 , SUP75N08-10 , IRF730 , TN0200K-T1 , TN0200TS , TP0101TS-T1 , TPCA8036 , UT100N03L , UT2301G-AE3-R , UT2302G-AE3 , UT2302L-AE3 .
History: 2SK4213A-ZK
Keywords - SUU50N06-07L MOSFET datasheet
SUU50N06-07L cross reference
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SUU50N06-07L substitution
SUU50N06-07L replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK4213A-ZK
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