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VB1218X Specs and Replacement

Type Designator: VB1218X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 316 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 typ Ohm

Package: SOT23

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VB1218X datasheet

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 vb1218x.pdf pdf_icon

VB1218X

VB1218X www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition = 4.5V 8 TrenchFET Gen III Power MOSFET at V 0.015 GS 20 10nC 100 % Rg Tested 0.018 7 at V = 2.5V GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC D (SOT-23) G 1 G 3 D ... See More ⇒

Detailed specifications: UT2302L-AE3, UT2955G, UT6898G-S08-R, UT8205AG-AG6, UTT25P10L, UTT80N10, VB1102M, VB1106K, IRFP260N, VB1240B, VB1240X, VB1330X, VB162KX, VB2140, VB2290A, VB2658, VB562K

Keywords - VB1218X MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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