All MOSFET. VB1218X Datasheet

 

VB1218X Datasheet and Replacement


   Type Designator: VB1218X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 316 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015(typ) Ohm
   Package: SOT23
 

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VB1218X Datasheet (PDF)

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VB1218X

VB1218Xwww.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition= 4.5V 8 TrenchFET Gen III Power MOSFETat V0.015 GS 2010nC 100 % Rg Tested0.018 7at V = 2.5V GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECD(SOT-23)G 1G3 D

Datasheet: UT2302L-AE3 , UT2955G , UT6898G-S08-R , UT8205AG-AG6 , UTT25P10L , UTT80N10 , VB1102M , VB1106K , 10N60 , VB1240B , VB1240X , VB1330X , VB162KX , VB2140 , VB2290A , VB2658 , VB562K .

History: JCS13AN50BC | IRF7701GPBF | BRFL10N65S | SWHA7N65D | MCAC40N10YA-TP | STD38NH02L-1 | SSPL50N30H

Keywords - VB1218X MOSFET datasheet

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