VB1218X MOSFET. Datasheet pdf. Equivalent
Type Designator: VB1218X
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 316 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015(typ) Ohm
Package: SOT23
VB1218X Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VB1218X Datasheet (PDF)
..1. Size:1388K cn vbsemi
vb1218x.pdf
vb1218x.pdf
VB1218Xwww.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition= 4.5V 8 TrenchFET Gen III Power MOSFETat V0.015 GS 2010nC 100 % Rg Tested0.018 7at V = 2.5V GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECD(SOT-23)G 1G3 D
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