All MOSFET. VB1330X Datasheet

 

VB1330X MOSFET. Datasheet pdf. Equivalent


   Type Designator: VB1330X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016(typ) Ohm
   Package: SOT23

 VB1330X Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VB1330X Datasheet (PDF)

 ..1. Size:572K  cn vbsemi
vb1330x.pdf

VB1330X
VB1330X

VB1330Xwww.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.016 at VGS = 10 V TrenchFET Power MOSFET8.030 4 nC 100 % Rg Tested0.023 at VGS = 4.5 V 6.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1

 8.1. Size:463K  cn vbsemi
vb1330.pdf

VB1330X
VB1330X

VB1330www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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