All MOSFET. VB162KX Datasheet

 

VB162KX Datasheet and Replacement


   Type Designator: VB162KX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.03 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 0.48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 3 nC
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.91(typ) Ohm
   Package: SOT23
 

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VB162KX Datasheet (PDF)

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VB162KX

VB162KXwww.VBsemi.comN-Channel 60 V(D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition60 0.91 at VGS = 10 V 0.7 100 % Rg and UIS Tested TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/ECDTO-236(SOT-23)G 1G3 DS 2STop ViewN-Channel MOSFET ABSOLUTE MAXIMUM RATIN

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VB162KX

VB162Kwww.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

Datasheet: UTT25P10L , UTT80N10 , VB1102M , VB1106K , VB1218X , VB1240B , VB1240X , VB1330X , IRFB4227 , VB2140 , VB2290A , VB2658 , VB562K , VB7101M , VB7322 , VB7638 , VB8658 .

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