All MOSFET. VB2290A Datasheet

 

VB2290A Datasheet and Replacement


   Type Designator: VB2290A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047(typ) Ohm
   Package: SOT23
 

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VB2290A Datasheet (PDF)

 ..1. Size:977K  cn vbsemi
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VB2290A

VB2290Awww.VBsemi.comP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.047 at VGS = - 10 V - 4.0 TrenchFET Power MOSFET- 20 0.060 at VGS = - 4.5 V - 3.8 8 nC 100 % Rg Tested0.089 at VGS = - 2.5 V - 3.0 Compliant to RoHS Directive 2002/95/ECSTO-236(

 8.1. Size:563K  cn vbsemi
 vb2290.pdf pdf_icon

VB2290A

VB2290www.VBsemi.comP-Channel 20 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 20 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.075 100 % Rg and UIS TestedRDS(on) () at VGS = - 2.5 V 0.080 Compliant to RoHS Directive 2002/95/ECID (A) - 3.5Configuration SingleS(SOT-23)G 1 G

Datasheet: VB1102M , VB1106K , VB1218X , VB1240B , VB1240X , VB1330X , VB162KX , VB2140 , IRFP250N , VB2658 , VB562K , VB7101M , VB7322 , VB7638 , VB8658 , VB9220 , VBA1101N .

History: NCE6050KA | FCHD125N65S3R0 | IRF9243 | FML12N60ES | LNE07R085H | STB11NM60 | R5019ANX

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