All MOSFET. VB2658 Datasheet

 

VB2658 Datasheet and Replacement


   Type Designator: VB2658
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05(typ) Ohm
   Package: SOT23
 

 VB2658 substitution

   - MOSFET ⓘ Cross-Reference Search

 

VB2658 Datasheet (PDF)

 ..1. Size:1147K  cn vbsemi
 vb2658.pdf pdf_icon

VB2658

VB2658www.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.04RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV/d

Datasheet: VB1106K , VB1218X , VB1240B , VB1240X , VB1330X , VB162KX , VB2140 , VB2290A , IRF9540 , VB562K , VB7101M , VB7322 , VB7638 , VB8658 , VB9220 , VBA1101N , VBA1203M .

History: STU13N60M2 | MSU2N60U | EMB12P03G | FQP7N20 | NTD40N03RG | IPD65R1K4CFD

Keywords - VB2658 MOSFET datasheet

 VB2658 cross reference
 VB2658 equivalent finder
 VB2658 lookup
 VB2658 substitution
 VB2658 replacement

 

 
Back to Top

 


 
.