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VB2658 Specs and Replacement

Type Designator: VB2658

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 typ Ohm

Package: SOT23

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VB2658 datasheet

 ..1. Size:1147K  cn vbsemi
 vb2658.pdf pdf_icon

VB2658

VB2658 www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.04 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV/d... See More ⇒

Detailed specifications: VB1106K, VB1218X, VB1240B, VB1240X, VB1330X, VB162KX, VB2140, VB2290A, 2N7000, VB562K, VB7101M, VB7322, VB7638, VB8658, VB9220, VBA1101N, VBA1203M

Keywords - VB2658 MOSFET specs

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