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VB562K Specs and Replacement

Type Designator: VB562K

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.700 typ Ohm

Package: TSOP6

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VB562K datasheet

 ..1. Size:643K  cn vbsemi
 vb562k.pdf pdf_icon

VB562K

VB562K www.VBsemi.com N- and P-Channel 6 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.660 at VGS = 10 V 0.80 TrenchFET Power MOSFET N-Channel 60 0.810 at VGS = 4.5 V 0.75 100 % Rg Tested 1.970 at VGS = - 10 V - 0.55 Compliant to RoHS Directive 2002/95/EC P-Channel - 60 2.350 at... See More ⇒

Detailed specifications: VB1218X, VB1240B, VB1240X, VB1330X, VB162KX, VB2140, VB2290A, VB2658, P55NF06, VB7101M, VB7322, VB7638, VB8658, VB9220, VBA1101N, VBA1203M, VBA1210

Keywords - VB562K MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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