VB562K MOSFET. Datasheet pdf. Equivalent
Type Designator: VB562K
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 0.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.7 nC
trⓘ - Rise Time: 9 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.700(typ) Ohm
Package: TSOP6
VB562K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VB562K Datasheet (PDF)
..1. Size:643K cn vbsemi
vb562k.pdf
vb562k.pdf
VB562Kwww.VBsemi.comN- and P-Channel 6 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.660 at VGS = 10 V 0.80 TrenchFET Power MOSFETN-Channel 600.810 at VGS = 4.5 V 0.75 100 % Rg Tested1.970 at VGS = - 10 V - 0.55 Compliant to RoHS Directive 2002/95/ECP-Channel - 602.350 at
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