All MOSFET. VB562K Datasheet

 

VB562K Datasheet and Replacement


   Type Designator: VB562K
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.700(typ) Ohm
   Package: TSOP6
 

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VB562K Datasheet (PDF)

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VB562K

VB562Kwww.VBsemi.comN- and P-Channel 6 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.660 at VGS = 10 V 0.80 TrenchFET Power MOSFETN-Channel 600.810 at VGS = 4.5 V 0.75 100 % Rg Tested1.970 at VGS = - 10 V - 0.55 Compliant to RoHS Directive 2002/95/ECP-Channel - 602.350 at

Datasheet: VB1218X , VB1240B , VB1240X , VB1330X , VB162KX , VB2140 , VB2290A , VB2658 , IRFB4115 , VB7101M , VB7322 , VB7638 , VB8658 , VB9220 , VBA1101N , VBA1203M , VBA1210 .

History: IPP80N04S3-H4 | IRFS4510 | SWU12N70D | MMF80R450PTH | NCEP063N85G | SSI65R190S2 | FDN86265P

Keywords - VB562K MOSFET datasheet

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