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VB8658 Specs and Replacement

Type Designator: VB8658

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 88 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.050 typ Ohm

Package: TSOP6

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VB8658 datasheet

 ..1. Size:1193K  cn vbsemi
 vb8658.pdf pdf_icon

VB8658

VB8658 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) Typ. ID (A) d Qg (TYP.) 100 % Rg and UIS tested 0.050 at VGS = -10 V -6.5 -60 10.1 nC 0.060 at VGS = -4.5 V -5.1 APPLICATIONS Load switches DC/DC converter TSOP-6 Top View (4) S 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm ... See More ⇒

Detailed specifications: VB162KX, VB2140, VB2290A, VB2658, VB562K, VB7101M, VB7322, VB7638, IRF630, VB9220, VBA1101N, VBA1203M, VBA1210, VBA1302, VBA1303, VBA1310S, VBA1311

Keywords - VB8658 MOSFET specs

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