FDB110N15A Datasheet and Replacement
Type Designator: FDB110N15A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 234 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 65 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO263 D2PAK
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FDB110N15A Datasheet (PDF)
fdb110n15a.pdf

November 2013FDB110N15A N-Channel PowerTrench MOSFET150 V, 92 A, 11 mFeatures Description RDS(on) = 9.25 m (Typ.) @ VGS = 10 V, ID = 92 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while main-taining superior switching performance.
fdb110n15a.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb110n15a.pdf

isc N-Channel MOSFET Transistor FDB110N15ADESCRIPTIONDrain Source Voltage: V = 150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL ARAMETER VA
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: AP2761I-H-HF | BLS6G3135S-20 | MTD5P06V | SWD4N70K2 | 4N70KG-TMS2-T | IXFP12N50P | SP8M24FRA
Keywords - FDB110N15A MOSFET datasheet
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History: AP2761I-H-HF | BLS6G3135S-20 | MTD5P06V | SWD4N70K2 | 4N70KG-TMS2-T | IXFP12N50P | SP8M24FRA



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