VBA1410 Datasheet and Replacement
Type Designator: VBA1410
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.010(typ) Ohm
Package: SO8
VBA1410 substitution
VBA1410 Datasheet (PDF)
vba1410.pdf

VBA1410www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Re
vba1405.pdf

VBA1405www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0045 at VGS = 10 V 18 100 % Rg and UIS Tested40 8 nC0.0065 at VGS = 4.5 V 14.5APPLICATIONS Notebook CPU Core- High-Side SwitchD SO-8 SD1 8 G SD2 7 SD3 6 G
Datasheet: VBA1101N , VBA1203M , VBA1210 , VBA1302 , VBA1303 , VBA1310S , VBA1311 , VBA1405 , SPP20N60C3 , VBA2107 , VBA2305 , VBA2309 , VBA2317 , VBA2412 , VBA2625 , VBA3102M , VBA3211 .
History: SVS14N60FD2 | FMP13N60E | AOTF15S60 | TSM414K34CS | JCS15N65BEI | AOT15S60 | SSF65R190S3
Keywords - VBA1410 MOSFET datasheet
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History: SVS14N60FD2 | FMP13N60E | AOTF15S60 | TSM414K34CS | JCS15N65BEI | AOT15S60 | SSF65R190S3



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