VBA2107 Specs and Replacement
Type Designator: VBA2107
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 235 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0050 typ Ohm
Package: SO8
VBA2107 substitution
- MOSFET ⓘ Cross-Reference Search
VBA2107 datasheet
vba2107.pdf
VBA2107 www.VBsemi.com P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET 0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC 0.0100 at VGS = - 1.8 V - 13 APPLICATIONS Load Switch Battery Swit... See More ⇒
Detailed specifications: VBA1203M, VBA1210, VBA1302, VBA1303, VBA1310S, VBA1311, VBA1405, VBA1410, IRFP260, VBA2305, VBA2309, VBA2317, VBA2412, VBA2625, VBA3102M, VBA3211, VBA3310
Keywords - VBA2107 MOSFET specs
VBA2107 cross reference
VBA2107 equivalent finder
VBA2107 pdf lookup
VBA2107 substitution
VBA2107 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10
Popular searches
3sk73 | 13n10 mosfet | 2n3565 transistor | datasheet irfz44n | 2sd1047 transistor | mj802 | bu508a | bc560c
