VBA2107 Datasheet and Replacement
Type Designator: VBA2107
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 235 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0050(typ) Ohm
Package: SO8
VBA2107 substitution
VBA2107 Datasheet (PDF)
vba2107.pdf
VBA2107www.VBsemi.comP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET 0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC0.0100 at VGS = - 1.8 V - 13APPLICATIONS Load Switch Battery Swit
Datasheet: VBA1203M , VBA1210 , VBA1302 , VBA1303 , VBA1310S , VBA1311 , VBA1405 , VBA1410 , IRFP260 , VBA2305 , VBA2309 , VBA2317 , VBA2412 , VBA2625 , VBA3102M , VBA3211 , VBA3310 .
History: VBA1311 | TSM4N80CZ | BUK9K8R7-40E | CS6N120P | AO7412 | NCE80T560D | NVMFS6D1N08H
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: VBA1311 | TSM4N80CZ | BUK9K8R7-40E | CS6N120P | AO7412 | NCE80T560D | NVMFS6D1N08H
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