VBA2625 Datasheet and Replacement
Type Designator: VBA2625
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0160(typ) Ohm
Package: SO8
VBA2625 substitution
VBA2625 Datasheet (PDF)
vba2625.pdf

VBA2625www.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.0195 at VGS = - 10 V - 10APPLICATIONS- 60 76 nC0.0250 at VGS = - 4.5 V - 9 Load SwitchSSO-8SD1 8GSD2 7SD3 6GD4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, un
vba2658.pdf

VBA2658www.VBsemi.comP-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 100 % Rg and UIS testedRDS(on) () at VGS = -10 V 0.0480RDS(on) () at VGS = -4.5 V 0.0612ID (A) per leg -8SSO-8S1 8 DGS D2 7S3 6 DG D4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted
Datasheet: VBA1311 , VBA1405 , VBA1410 , VBA2107 , VBA2305 , VBA2309 , VBA2317 , VBA2412 , TK10A60D , VBA3102M , VBA3211 , VBA3310 , VBA3316G , VBA3328 , VBA3410 , VBA3695 , VBA4216 .
History: JMSH0802MTL | JMPK7N65BJ | JMSH1001AE7 | WMK15N65F2 | JMSH0802ME | JMPK630BJ | JMH65R110PPLNFD
Keywords - VBA2625 MOSFET datasheet
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History: JMSH0802MTL | JMPK7N65BJ | JMSH1001AE7 | WMK15N65F2 | JMSH0802ME | JMPK630BJ | JMH65R110PPLNFD



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