All MOSFET. VBA3102M Datasheet

 

VBA3102M Datasheet and Replacement


   Type Designator: VBA3102M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.2 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.187(typ) Ohm
   Package: SO8
 

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VBA3102M Datasheet (PDF)

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VBA3102M

VBA3102Mwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition 100 0.187 at VGS = 10 V 37.3 nC TrenchFET Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Conversion- Notebook System PowerD1 D2SO-8 1

Datasheet: VBA1405 , VBA1410 , VBA2107 , VBA2305 , VBA2309 , VBA2317 , VBA2412 , VBA2625 , 5N60 , VBA3211 , VBA3310 , VBA3316G , VBA3328 , VBA3410 , VBA3695 , VBA4216 , VBA4311 .

History: BUK753R1-40E | FTK2N60P | JFPC12N60C | IRFP448PBF | BLF7G27L-150P | SJMN360R70ZF | IRFP4321PBF

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