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VBA3102M Specs and Replacement

Type Designator: VBA3102M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.2 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.187 typ Ohm

Package: SO8

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VBA3102M datasheet

 ..1. Size:492K  cn vbsemi
 vba3102m.pdf pdf_icon

VBA3102M

VBA3102M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 100 0.187 at VGS = 10 V 3 7.3 nC TrenchFET Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Conversion - Notebook System Power D1 D2 SO-8 1... See More ⇒

Detailed specifications: VBA1405, VBA1410, VBA2107, VBA2305, VBA2309, VBA2317, VBA2412, VBA2625, AON7410, VBA3211, VBA3310, VBA3316G, VBA3328, VBA3410, VBA3695, VBA4216, VBA4311

Keywords - VBA3102M MOSFET specs

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