VBA3102M MOSFET. Datasheet pdf. Equivalent
Type Designator: VBA3102M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 2.2 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.187(typ) Ohm
Package: SO8
VBA3102M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBA3102M Datasheet (PDF)
..1. Size:492K cn vbsemi
vba3102m.pdf
vba3102m.pdf
VBA3102Mwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition 100 0.187 at VGS = 10 V 37.3 nC TrenchFET Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Conversion- Notebook System PowerD1 D2SO-8 1
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
