All MOSFET. VBA3211 Datasheet

 

VBA3211 Datasheet and Replacement


   Type Designator: VBA3211
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009(typ) Ohm
   Package: SO8
 

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VBA3211 Datasheet (PDF)

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 vba3211.pdf pdf_icon

VBA3211

VBA3211www.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.009 at VGS = 4.5 V 10 TrenchFET Power MOSFET20 15 nC 100 % UIS Tested0.012 at VGS = 2.5 V 8.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box L

 9.1. Size:469K  cn vbsemi
 vba3222.pdf pdf_icon

VBA3211

VBA3222www.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D2

Datasheet: VBA1410 , VBA2107 , VBA2305 , VBA2309 , VBA2317 , VBA2412 , VBA2625 , VBA3102M , 4N60 , VBA3310 , VBA3316G , VBA3328 , VBA3410 , VBA3695 , VBA4216 , VBA4311 , VBA4317 .

History: APT6029BLL | RQA0008NXAQS | BLP04N10-B | S-LNTK2575LT1G | PMN50XP | AM2394NE | AP4451GM-HF

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