VBA3410 Specs and Replacement
Type Designator: VBA3410
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.010 typ Ohm
Package: SO8
VBA3410 substitution
- MOSFET ⓘ Cross-Reference Search
VBA3410 datasheet
vba3410.pdf
VBA3410 www.VBsemi.com Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.010 at VGS = 10 V 12 40 5.9 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 10 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Swit... See More ⇒
Detailed specifications: VBA2317, VBA2412, VBA2625, VBA3102M, VBA3211, VBA3310, VBA3316G, VBA3328, AON6380, VBA3695, VBA4216, VBA4311, VBA4317, VBA4338, VBA4658, VBA4670, VBA5102M
Keywords - VBA3410 MOSFET specs
VBA3410 cross reference
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VBA3410 substitution
VBA3410 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: VBA3328
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