All MOSFET. VBA3410 Datasheet

 

VBA3410 Datasheet and Replacement


   Type Designator: VBA3410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.010(typ) Ohm
   Package: SO8
 

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VBA3410 Datasheet (PDF)

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VBA3410

VBA3410www.VBsemi.comDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.010 at VGS = 10 V 1240 5.9 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 10Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Swit

Datasheet: VBA2317 , VBA2412 , VBA2625 , VBA3102M , VBA3211 , VBA3310 , VBA3316G , VBA3328 , IRLZ44N , VBA3695 , VBA4216 , VBA4311 , VBA4317 , VBA4338 , VBA4658 , VBA4670 , VBA5102M .

History: AP9990GMT-HF | IRF3805PBF | 2SJ409L | MPSW65M046CFD | SWP035R10E6S | NCE50NF220K | APT20M40HVR

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