All MOSFET. VBA3695 Datasheet

 

VBA3695 Datasheet and Replacement


   Type Designator: VBA3695
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.09 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095(typ) Ohm
   Package: SO8
 

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VBA3695 Datasheet (PDF)

 ..1. Size:690K  cn vbsemi
 vba3695.pdf pdf_icon

VBA3695

VBA3695www.VBsemi.comDual N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.095 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.100 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterSO-8 DualD2D1

 9.1. Size:725K  cn vbsemi
 vba3638.pdf pdf_icon

VBA3695

VBA3638www.VBsemi.comDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222G1G11N-Channel MOSFET N-Channel

Datasheet: VBA2412 , VBA2625 , VBA3102M , VBA3211 , VBA3310 , VBA3316G , VBA3328 , VBA3410 , AO4407 , VBA4216 , VBA4311 , VBA4317 , VBA4338 , VBA4658 , VBA4670 , VBA5102M , VBA5325 .

History: FTK2N65P

Keywords - VBA3695 MOSFET datasheet

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