VBA3695 Specs and Replacement
Type Designator: VBA3695
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.09 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 22 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 typ Ohm
Package: SO8
VBA3695 substitution
- MOSFET ⓘ Cross-Reference Search
VBA3695 datasheet
vba3695.pdf
VBA3695 www.VBsemi.com Dual N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.095 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.100 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter SO-8 Dual D2 D1 ... See More ⇒
vba3638.pdf
VBA3638 www.VBsemi.com Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G1 G 1 1 N-Channel MOSFET N-Channel... See More ⇒
Detailed specifications: VBA2412, VBA2625, VBA3102M, VBA3211, VBA3310, VBA3316G, VBA3328, VBA3410, IRF530, VBA4216, VBA4311, VBA4317, VBA4338, VBA4658, VBA4670, VBA5102M, VBA5325
Keywords - VBA3695 MOSFET specs
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History: AGM609MNA
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