All MOSFET. VBA4216 Datasheet

 

VBA4216 Datasheet and Replacement


   Type Designator: VBA4216
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018(typ) Ohm
   Package: SO8
 

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VBA4216 Datasheet (PDF)

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VBA4216

VBA4216www.VBsemi.comDual P-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = - 4.5 V- 8.9 TrenchFET Power MOSFET0.022 at VGS = - 2.5 V- 20 - 8.1 Advanced High Cell Density Process 0.030 at VGS = - 1.8 V- 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICA

Datasheet: VBA2625 , VBA3102M , VBA3211 , VBA3310 , VBA3316G , VBA3328 , VBA3410 , VBA3695 , IRLB4132 , VBA4311 , VBA4317 , VBA4338 , VBA4658 , VBA4670 , VBA5102M , VBA5325 , VBA5415 .

History: SI1433DH | SVS7N60FJD2 | CSFR3N60F | SSF2610E | HM120N04I | TPCA8027-H | NCE85H25

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