VBA4216 Specs and Replacement
Type Designator: VBA4216
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 typ Ohm
Package: SO8
VBA4216 substitution
- MOSFET ⓘ Cross-Reference Search
VBA4216 datasheet
vba4216.pdf
VBA4216 www.VBsemi.com Dual P-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.018 at VGS = - 4.5 V - 8.9 TrenchFET Power MOSFET 0.022 at VGS = - 2.5 V - 20 - 8.1 Advanced High Cell Density Process 0.030 at VGS = - 1.8 V - 3.6 Compliant to RoHS Directive 2002/95/EC APPLICA... See More ⇒
Detailed specifications: VBA2625, VBA3102M, VBA3211, VBA3310, VBA3316G, VBA3328, VBA3410, VBA3695, CS150N03A8, VBA4311, VBA4317, VBA4338, VBA4658, VBA4670, VBA5102M, VBA5325, VBA5415
Keywords - VBA4216 MOSFET specs
VBA4216 cross reference
VBA4216 equivalent finder
VBA4216 pdf lookup
VBA4216 substitution
VBA4216 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10
Popular searches
bc238 | 2sb772 | 2n2222a-1726 datasheet | bc516 | 2n3391 equivalent | a562 transistor | oc44 datasheet | 2sa70