TSA100N20M PDF and Equivalents Search

 

TSA100N20M Specs and Replacement

Type Designator: TSA100N20M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 783 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO3P

TSA100N20M substitution

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TSA100N20M datasheet

 ..1. Size:1826K  truesemi
tsa100n20m.pdf pdf_icon

TSA100N20M

TSA100N20M 200V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 100A,200V,Max.RDS(on)=25m @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withstand... See More ⇒

 9.1. Size:261K  taiwansemi
tsa1036cx.pdf pdf_icon

TSA100N20M

TSA1036CX Taiwan Semiconductor General Purpose PNP Transistor FEATURES KEY PERFORMANCE PARAMETERS Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA PARAMETER VALUE UNIT PNP Silicon Transistor BVCBO -60 V Compliant to RoHS Directive 2011/65/EU and in BVCEO -60 V accordance to WEEE 2002/96/EC IC -0.6 A Halogen-free according to IEC 61249-2-21 VCE(SAT) IC=-150mA... See More ⇒

Detailed specifications: VBA4311, VBA4317, VBA4338, VBA4658, VBA4670, VBA5102M, VBA5325, VBA5415, IRFP250, TSA18N50MR, TSA20N60MR, TSA20N65MR, TSA23N50M, TSA24N50M, TSA28N50M, TSA3878, TSA50N20MK

Keywords - TSA100N20M MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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