All MOSFET. TSA100N20M Datasheet

 

TSA100N20M Datasheet and Replacement


   Type Designator: TSA100N20M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 783 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO3P
 

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TSA100N20M Datasheet (PDF)

 ..1. Size:1826K  truesemi
 tsa100n20m.pdf pdf_icon

TSA100N20M

TSA100N20M 200V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 100A,200V,Max.RDS(on)=25m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand

 9.1. Size:261K  taiwansemi
 tsa1036cx.pdf pdf_icon

TSA100N20M

TSA1036CX Taiwan Semiconductor General Purpose PNP Transistor FEATURES KEY PERFORMANCE PARAMETERS Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA PARAMETER VALUE UNIT PNP Silicon Transistor BVCBO -60 V Compliant to RoHS Directive 2011/65/EU and in BVCEO -60 V accordance to WEEE 2002/96/EC IC -0.6 A Halogen-free according to IEC 61249-2-21 VCE(SAT) IC=-150mA

Datasheet: VBA4311 , VBA4317 , VBA4338 , VBA4658 , VBA4670 , VBA5102M , VBA5325 , VBA5415 , STF13NM60N , TSA18N50MR , TSA20N60MR , TSA20N65MR , TSA23N50M , TSA24N50M , TSA28N50M , TSA3878 , TSA50N20MK .

History: IRFSL3107PBF | AON6206

Keywords - TSA100N20M MOSFET datasheet

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