TSA18N50MR Datasheet and Replacement
Type Designator: TSA18N50MR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 235 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: TO3P
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TSA18N50MR Datasheet (PDF)
tsa18n50mr.pdf

TSA18N50MR500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 18.0A,500V,Max.RDS(on)=0.31 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 42nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and with
stsa1805.pdf

STSA1805LOW VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORPRELIMINARY DATAOrdering Marking PackageCode / ShipmentSTSA1805 SA1805 TO-92 / BulkSTSA1805-AP SA1805 TO-92 / Ammopack VERY LOW COLLECTOR TO EMITTERSATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEEDAPPLICATIONS: EMERGENCY LIGHTINGTO-92 VOLTAGE REGULATORSBulk RELAY DRIVERS HIGH EF
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: PP4B10AS | KI7N10DY | UTT150N06 | SI2308 | SFF40N30MUB | SRC60R680E | UT2302L-AE3
Keywords - TSA18N50MR MOSFET datasheet
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History: PP4B10AS | KI7N10DY | UTT150N06 | SI2308 | SFF40N30MUB | SRC60R680E | UT2302L-AE3



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