All MOSFET. TSA24N50M Datasheet

 

TSA24N50M Datasheet and Replacement


   Type Designator: TSA24N50M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO3P
 

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TSA24N50M Datasheet (PDF)

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TSA24N50M

TSA24N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 24A,500V,Max.RDS(on)=0.2 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 90nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

Datasheet: VBA5102M , VBA5325 , VBA5415 , TSA100N20M , TSA18N50MR , TSA20N60MR , TSA20N65MR , TSA23N50M , SKD502T , TSA28N50M , TSA3878 , TSA50N20MK , TSA82N25M , TSA82N30M , TSD16N25M , TSD18N20M , TSD5N50MR .

History: 20N65 | TPM1012R3 | KF9N25D | BUK7526-100B | IXFH14N100Q2 | QM0006G | DADMH056N090Z1B

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