TSA28N50M PDF and Equivalents Search

 

TSA28N50M Specs and Replacement

Type Designator: TSA28N50M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO3P

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TSA28N50M datasheet

 ..1. Size:904K  truesemi
 tsa28n50m.pdf pdf_icon

TSA28N50M

TSA28N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 28A,500V,Max.RDS(on)=0.16 @ advanced planar stripe DMOS technology. This advanced technology has been especially tailored to VGS =10V minimize on-state resistance, provide superior switching Low gate charge(typical 90nC) performance, and withstand high energ... See More ⇒

Detailed specifications: VBA5325, VBA5415, TSA100N20M, TSA18N50MR, TSA20N60MR, TSA20N65MR, TSA23N50M, TSA24N50M, SI2302, TSA3878, TSA50N20MK, TSA82N25M, TSA82N30M, TSD16N25M, TSD18N20M, TSD5N50MR, TSD5N60M

Keywords - TSA28N50M MOSFET specs

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