TSA50N20MK MOSFET. Datasheet pdf. Equivalent
Type Designator: TSA50N20MK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 244 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 657 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TO3P
TSA50N20MK Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSA50N20MK Datasheet (PDF)
..1. Size:2021K truesemi
tsa50n20mk.pdf
tsa50n20mk.pdf
TSA50N20MK200V N-Channel MOSFETGeneral Description Features This Power MOSFET is produced using Truesemis 50A,200V,Max.RDS(on) =10V =0.038 @ VGS advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate chargeminimize on-state resistance, provide superior switching High ruggednessperformance, and withstand
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