TSA50N20MK Specs and Replacement
Type Designator: TSA50N20MK
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 657 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TO3P
TSA50N20MK substitution
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TSA50N20MK datasheet
tsa50n20mk.pdf
TSA50N20MK 200V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 50A,200V,Max.RDS(on) =10V =0.038 @ VGS advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge minimize on-state resistance, provide superior switching High ruggedness performance, and withstand ... See More ⇒
Detailed specifications: TSA100N20M, TSA18N50MR, TSA20N60MR, TSA20N65MR, TSA23N50M, TSA24N50M, TSA28N50M, TSA3878, 18N50, TSA82N25M, TSA82N30M, TSD16N25M, TSD18N20M, TSD5N50MR, TSD5N60M, TSU5N60M, TSD5N65M
Keywords - TSA50N20MK MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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