TSA82N25M MOSFET. Datasheet pdf. Equivalent
Type Designator: TSA82N25M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 550 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 82 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 123 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 783 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO3P
TSA82N25M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSA82N25M Datasheet (PDF)
tsa82n25m.pdf
TSA82N25M 250V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 82A,250V,Max.RDS(on)=35m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand h
tsa82n30m.pdf
TSA82N30M 300V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 82A,300V,Max.RDS(on)=46m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand h
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
