All MOSFET. TSA82N25M Datasheet

 

TSA82N25M Datasheet and Replacement


   Type Designator: TSA82N25M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 550 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 82 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 783 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO3P
 

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TSA82N25M Datasheet (PDF)

 ..1. Size:1162K  truesemi
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TSA82N25M

TSA82N25M 250V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 82A,250V,Max.RDS(on)=35m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand h

 8.1. Size:1528K  truesemi
 tsa82n30m.pdf pdf_icon

TSA82N25M

TSA82N30M 300V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 82A,300V,Max.RDS(on)=46m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand h

Datasheet: TSA18N50MR , TSA20N60MR , TSA20N65MR , TSA23N50M , TSA24N50M , TSA28N50M , TSA3878 , TSA50N20MK , IRF530 , TSA82N30M , TSD16N25M , TSD18N20M , TSD5N50MR , TSD5N60M , TSU5N60M , TSD5N65M , TSU5N65M .

History: IN6005

Keywords - TSA82N25M MOSFET datasheet

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