TSA82N25M Specs and Replacement
Type Designator: TSA82N25M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 550 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 82 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 783 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO3P
TSA82N25M substitution
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TSA82N25M datasheet
tsa82n25m.pdf
TSA82N25M 250V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 82A,250V,Max.RDS(on)=35m @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withstand h... See More ⇒
tsa82n30m.pdf
TSA82N30M 300V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 82A,300V,Max.RDS(on)=46m @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withstand h... See More ⇒
Detailed specifications: TSA18N50MR , TSA20N60MR , TSA20N65MR , TSA23N50M , TSA24N50M , TSA28N50M , TSA3878 , TSA50N20MK , 20N50 , TSA82N30M , TSD16N25M , TSD18N20M , TSD5N50MR , TSD5N60M , TSU5N60M , TSD5N65M , TSU5N65M .
History: AP50N06P
Keywords - TSA82N25M MOSFET specs
TSA82N25M cross reference
TSA82N25M equivalent finder
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TSA82N25M substitution
TSA82N25M replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AP50N06P
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