TSA82N30M MOSFET Datasheet: N-Ch, 300V, 82A. Full specification with pinout and replacement list

TSA82N30M Specs and Replacement

Type Designator: TSA82N30M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 580 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 82 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 783 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: TO3P

TSA82N30M substitution

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TSA82N30M datasheet

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TSA82N30M 300V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 82A,300V,Max.RDS(on)=46m @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withstand h... See More ⇒

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TSA82N25M 250V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 82A,250V,Max.RDS(on)=35m @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withstand h... See More ⇒

Detailed specifications: TSA20N60MR, TSA20N65MR, TSA23N50M, TSA24N50M, TSA28N50M, TSA3878, TSA50N20MK, TSA82N25M, IRF520, TSD16N25M, TSD18N20M, TSD5N50MR, TSD5N60M, TSU5N60M, TSD5N65M, TSU5N65M, TSD840MD