TSA82N30M Datasheet and Replacement
Type Designator: TSA82N30M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 580 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 82 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 783 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: TO3P
TSA82N30M substitution
TSA82N30M Datasheet (PDF)
tsa82n30m.pdf

TSA82N30M 300V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 82A,300V,Max.RDS(on)=46m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand h
tsa82n25m.pdf

TSA82N25M 250V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 82A,250V,Max.RDS(on)=35m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand h
Datasheet: TSA20N60MR , TSA20N65MR , TSA23N50M , TSA24N50M , TSA28N50M , TSA3878 , TSA50N20MK , TSA82N25M , CS150N03A8 , TSD16N25M , TSD18N20M , TSD5N50MR , TSD5N60M , TSU5N60M , TSD5N65M , TSU5N65M , TSD840MD .
History: H5N60U | APQ10SN60A | IRF744 | FMI12N50ES | JMTV2305A | LND20N60 | IXFT10N100
Keywords - TSA82N30M MOSFET datasheet
TSA82N30M cross reference
TSA82N30M equivalent finder
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TSA82N30M substitution
TSA82N30M replacement
History: H5N60U | APQ10SN60A | IRF744 | FMI12N50ES | JMTV2305A | LND20N60 | IXFT10N100



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