TSD16N25M PDF and Equivalents Search

 

TSD16N25M Specs and Replacement

Type Designator: TSD16N25M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: TO252

TSD16N25M substitution

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TSD16N25M datasheet

 ..1. Size:3277K  truesemi
 tsd16n25m.pdf pdf_icon

TSD16N25M

TSD16N25M 250V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s =10V 16A,250V,Max.R =0.25 @ VGS advanced planar stripe DMOS technology. DS(on) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and comm... See More ⇒

 9.1. Size:199K  taiwansemi
 tsd1664cy.pdf pdf_icon

TSD16N25M

TSD1664 Low Vcesat NPN Transistor SOT-89 Pin Definition PRODUCT SUMMARY 1. Base 2. Collector BVCEO 32V 3. Emitter BVCBO 40V IC 1A VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA Features Ordering Information Low VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA (Typ.) Part No. Package Packing Complementary part with TSB1132 TSD1664CY RM SOT-89 1Kpcs / 7 Reel TSD1664CY... See More ⇒

Detailed specifications: TSA20N65MR, TSA23N50M, TSA24N50M, TSA28N50M, TSA3878, TSA50N20MK, TSA82N25M, TSA82N30M, IRF2807, TSD18N20M, TSD5N50MR, TSD5N60M, TSU5N60M, TSD5N65M, TSU5N65M, TSD840MD, TSF10N80M

Keywords - TSD16N25M MOSFET specs

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