All MOSFET. TSD16N25M Datasheet

 

TSD16N25M Datasheet and Replacement


   Type Designator: TSD16N25M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO252
 

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TSD16N25M Datasheet (PDF)

 ..1. Size:3277K  truesemi
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TSD16N25M

TSD16N25M250V N-Channel MOSFETGeneral Description Features This Power MOSFET is produced using Truesemis =10V 16A,250V,Max.R=0.25 @ VGS advanced planar stripe DMOS technology.DS(on)This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand comm

 9.1. Size:199K  taiwansemi
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TSD16N25M

TSD1664 Low Vcesat NPN Transistor SOT-89 Pin Definition: PRODUCT SUMMARY 1. Base 2. Collector BVCEO 32V 3. Emitter BVCBO 40V IC 1A VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA Features Ordering Information Low VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA (Typ.) Part No. Package Packing Complementary part with TSB1132 TSD1664CY RM SOT-89 1Kpcs / 7 Reel TSD1664CY

Datasheet: TSA20N65MR , TSA23N50M , TSA24N50M , TSA28N50M , TSA3878 , TSA50N20MK , TSA82N25M , TSA82N30M , IRFB31N20D , TSD18N20M , TSD5N50MR , TSD5N60M , TSU5N60M , TSD5N65M , TSU5N65M , TSD840MD , TSF10N80M .

History: LPSA3487 | 2N7002ESEGP | DMTH4007LPS | UPA1764G | VSE003N04MSC-G | 6N60KG-TA3-T | AOU3N50

Keywords - TSD16N25M MOSFET datasheet

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