TSD16N25M MOSFET. Datasheet pdf. Equivalent
Type Designator: TSD16N25M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO252
TSD16N25M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSD16N25M Datasheet (PDF)
tsd16n25m.pdf
TSD16N25M250V N-Channel MOSFETGeneral Description Features This Power MOSFET is produced using Truesemis =10V 16A,250V,Max.R=0.25 @ VGS advanced planar stripe DMOS technology.DS(on)This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand comm
tsd1664cy.pdf
TSD1664 Low Vcesat NPN Transistor SOT-89 Pin Definition: PRODUCT SUMMARY 1. Base 2. Collector BVCEO 32V 3. Emitter BVCBO 40V IC 1A VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA Features Ordering Information Low VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA (Typ.) Part No. Package Packing Complementary part with TSB1132 TSD1664CY RM SOT-89 1Kpcs / 7 Reel TSD1664CY
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
