TSD18N20M PDF and Equivalents Search

 

TSD18N20M Specs and Replacement

Type Designator: TSD18N20M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 227 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO252

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TSD18N20M datasheet

 ..1. Size:489K  truesemi
 tsd18n20m.pdf pdf_icon

TSD18N20M

TSD18N20M 200V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 18A,200V,Max.RDS(on)=0.17 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 22nC) minimize on-state resistance, provide superior switching High ruggedness performance, an... See More ⇒

 9.1. Size:344K  taiwansemi
 tsd1858ch.pdf pdf_icon

TSD18N20M

TSD1858 Low Vcesat NPN Transistor TO-251 Pin Definition PRODUCT SUMMARY (IPAK) 1. Base 2. Collector BVCBO 180V 3. Emitter BVCEO 160V IC 1.5A VCE(SAT) 0.3V @ IC = 1A, IB = 100mA Features Ordering Information Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) Part No. Package Packing High BVCEO TSD1858CH C5G TO-251 75pcs / Tube Note G denote for Hal... See More ⇒

Detailed specifications: TSA23N50M, TSA24N50M, TSA28N50M, TSA3878, TSA50N20MK, TSA82N25M, TSA82N30M, TSD16N25M, STF13NM60N, TSD5N50MR, TSD5N60M, TSU5N60M, TSD5N65M, TSU5N65M, TSD840MD, TSF10N80M, TSF16N50MR

Keywords - TSD18N20M MOSFET specs

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