All MOSFET. TSD18N20M Datasheet

 

TSD18N20M Datasheet and Replacement


   Type Designator: TSD18N20M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 227 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO252
 

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TSD18N20M Datasheet (PDF)

 ..1. Size:489K  truesemi
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TSD18N20M

TSD18N20M 200V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 18A,200V,Max.RDS(on)=0.17 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 22nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an

 9.1. Size:344K  taiwansemi
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TSD18N20M

TSD1858 Low Vcesat NPN Transistor TO-251 Pin Definition: PRODUCT SUMMARY (IPAK) 1. Base 2. Collector BVCBO 180V 3. Emitter BVCEO 160V IC 1.5A VCE(SAT) 0.3V @ IC = 1A, IB = 100mA Features Ordering Information Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) Part No. Package Packing High BVCEO TSD1858CH C5G TO-251 75pcs / Tube Note: G denote for Hal

Datasheet: TSA23N50M , TSA24N50M , TSA28N50M , TSA3878 , TSA50N20MK , TSA82N25M , TSA82N30M , TSD16N25M , IRF2807 , TSD5N50MR , TSD5N60M , TSU5N60M , TSD5N65M , TSU5N65M , TSD840MD , TSF10N80M , TSF16N50MR .

History: XP161A1355PR-G | PMV280ENEA | SLF50R140SJ | MTP5N06 | PSMN9R0-30YL | NTD6414AN-1G | SED3081M

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