All MOSFET. TSD18N20M Datasheet

 

TSD18N20M MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSD18N20M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 227 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO252

 TSD18N20M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSD18N20M Datasheet (PDF)

 ..1. Size:489K  truesemi
 tsd18n20m.pdf

TSD18N20M TSD18N20M

TSD18N20M 200V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 18A,200V,Max.RDS(on)=0.17 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 22nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an

 9.1. Size:344K  taiwansemi
 tsd1858ch.pdf

TSD18N20M TSD18N20M

TSD1858 Low Vcesat NPN Transistor TO-251 Pin Definition: PRODUCT SUMMARY (IPAK) 1. Base 2. Collector BVCBO 180V 3. Emitter BVCEO 160V IC 1.5A VCE(SAT) 0.3V @ IC = 1A, IB = 100mA Features Ordering Information Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) Part No. Package Packing High BVCEO TSD1858CH C5G TO-251 75pcs / Tube Note: G denote for Hal

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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