TSU5N65M MOSFET Datasheet: N-Ch, 650V, 3A. Full specification with pinout and replacement list

TSU5N65M Specs and Replacement

Type Designator: TSU5N65M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 58 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO251

TSU5N65M substitution

- MOSFET ⓘ Cross-Reference Search

TSU5N65M datasheet

..1. Size:1206K truesemi
tsd5n65m tsu5n65m.pdf pdf_icon

TSD5N65M/TSU5N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 3.0A,650V,Max.RDS(on)=3.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness performance, and... See More ⇒

8.1. Size:1121K truesemi
tsd5n60m tsu5n60m.pdf pdf_icon

TSD5N60M/TSU5N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.5A,600V,Max.RDS(on)=2.5 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 12nC) minimize on-state resistance, provide superior switching High ruggedness performance, and... See More ⇒

Detailed specifications: TSA82N25M, TSA82N30M, TSD16N25M, TSD18N20M, TSD5N50MR, TSD5N60M, TSU5N60M, TSD5N65M, 75N75, TSD840MD, TSF10N80M, TSF16N50MR, TSF16N60MR, TSF16N65MR, TSF18N20M, TSF18N50MR, TSF18N60MR