All MOSFET. TSF4N90M Datasheet

 

TSF4N90M Datasheet and Replacement


   Type Designator: TSF4N90M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO220F
 

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TSF4N90M Datasheet (PDF)

 ..1. Size:1591K  truesemi
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TSF4N90M

TSF4N90M900V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis Drain-Source breakdown voltage:advanced planar stripe DMOS technology.BVDSS=900V (Min.)This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Low gate charge: Qg=22nC (Typ.)performance, and withstand high

 9.1. Size:1096K  truesemi
 tsp4n60m tsf4n60m.pdf pdf_icon

TSF4N90M

TSP4N60M/TSF4N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

Datasheet: TSF16N60MR , TSF16N65MR , TSF18N20M , TSF18N50MR , TSF18N60MR , TSF20N50M , TSF20N60MR , TSF20N65MR , EMB04N03H , TSF60R190S2 , TSP60R190S2 , TSF65R190S2 , TSP65R190S2 , TSA65R190S2 , TSK65R190S2 , TSF65R360S2 , TSF840MD .

History: OSG70R1K4FF | PMZ320UPE | SLD60R380S2 | IXTA4N150HV

Keywords - TSF4N90M MOSFET datasheet

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