TSF4N90M MOSFET Datasheet: N-Ch, 900V, 4A. Full specification with pinout and replacement list

TSF4N90M Specs and Replacement

Type Designator: TSF4N90M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm

Package: TO220F

TSF4N90M substitution

- MOSFET ⓘ Cross-Reference Search

TSF4N90M datasheet

..1. Size:1591K truesemi
tsf4n90m.pdf pdf_icon

TSF4N90M 900V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s Drain-Source breakdown voltage advanced planar stripe DMOS technology. BVDSS=900V (Min.) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Low gate charge Qg=22nC (Typ.) performance, and withstand high ... See More ⇒

9.1. Size:1096K truesemi
tsp4n60m tsf4n60m.pdf pdf_icon

TSP4N60M/TSF4N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness performance, and... See More ⇒

Detailed specifications: TSF16N60MR, TSF16N65MR, TSF18N20M, TSF18N50MR, TSF18N60MR, TSF20N50M, TSF20N60MR, TSF20N65MR, AON7403, TSF60R190S2, TSP60R190S2, TSF65R190S2, TSP65R190S2, TSA65R190S2, TSK65R190S2, TSF65R360S2, TSF840MD