TSF60R190S2 Specs and Replacement
Type Designator: TSF60R190S2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 68 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220F
TSF60R190S2 substitution
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TSF60R190S2 datasheet
tsf60r190s2 tsp60r190s2.pdf
May, 2018 SJ-FET TSF60R190S2/TSP60R190S2 600V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced charge balance mechanism for outstanding 650V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16 This advanced technology ... See More ⇒
Detailed specifications: TSF16N65MR, TSF18N20M, TSF18N50MR, TSF18N60MR, TSF20N50M, TSF20N60MR, TSF20N65MR, TSF4N90M, K2611, TSP60R190S2, TSF65R190S2, TSP65R190S2, TSA65R190S2, TSK65R190S2, TSF65R360S2, TSF840MD, TSF840MR
Keywords - TSF60R190S2 MOSFET specs
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History: NCE8205t | NCE8290AC | TSF4N90M | NCE65N680K | AON6782 | AON6405 | AON6774
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