TSF60R190S2 MOSFET. Datasheet pdf. Equivalent
Type Designator: TSF60R190S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36.5 nC
trⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 68 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220F
TSF60R190S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSF60R190S2 Datasheet (PDF)
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tsf60r190s2 tsp60r190s2.pdf
tsf60r190s2 tsp60r190s2.pdf
May, 2018SJ-FETTSF60R190S2/TSP60R190S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance mechanism for outstanding 650V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16This advanced technology
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
