All MOSFET. TSF60R190S2 Datasheet

 

TSF60R190S2 Datasheet and Replacement


   Type Designator: TSF60R190S2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220F
 

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TSF60R190S2 Datasheet (PDF)

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TSF60R190S2

May, 2018SJ-FETTSF60R190S2/TSP60R190S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance mechanism for outstanding 650V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16This advanced technology

Datasheet: TSF16N65MR , TSF18N20M , TSF18N50MR , TSF18N60MR , TSF20N50M , TSF20N60MR , TSF20N65MR , TSF4N90M , IRF9640 , TSP60R190S2 , TSF65R190S2 , TSP65R190S2 , TSA65R190S2 , TSK65R190S2 , TSF65R360S2 , TSF840MD , TSF840MR .

History: AM3425P | FDS7288N3 | HMS4N70I | 2SK2218 | AM3932N | SQM50028EM | AM7490N

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