All MOSFET. TSK65R190S2 Datasheet

 

TSK65R190S2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSK65R190S2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36.5 nC
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO247

 TSK65R190S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSK65R190S2 Datasheet (PDF)

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 tsf65r190s2 tsp65r190s2 tsa65r190s2 tsk65r190s2.pdf

TSK65R190S2 TSK65R190S2

May, 2018SJ-FETTSF65R190S2/TSP65R190S2/TSA65R190S2/TSK65R190S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16T

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