All MOSFET. TSK65R190S2 Datasheet

 

TSK65R190S2 Datasheet and Replacement


   Type Designator: TSK65R190S2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO247
 

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TSK65R190S2 Datasheet (PDF)

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TSK65R190S2

May, 2018SJ-FETTSF65R190S2/TSP65R190S2/TSA65R190S2/TSK65R190S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16T

Datasheet: TSF20N60MR , TSF20N65MR , TSF4N90M , TSF60R190S2 , TSP60R190S2 , TSF65R190S2 , TSP65R190S2 , TSA65R190S2 , BS170 , TSF65R360S2 , TSF840MD , TSF840MR , TSF9N90M , TSK80R240S1 , TSK82N25M , TSP10N60M , TSF10N60M .

History: PA110BC

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