TSK65R190S2 Specs and Replacement
Type Designator: TSK65R190S2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 68 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO247
TSK65R190S2 substitution
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TSK65R190S2 datasheet
tsf65r190s2 tsp65r190s2 tsa65r190s2 tsk65r190s2.pdf
May, 2018 SJ-FET TSF65R190S2/TSP65R190S2/TSA65R190S2/TSK65R190S2 650V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16 T... See More ⇒
Detailed specifications: TSF20N60MR, TSF20N65MR, TSF4N90M, TSF60R190S2, TSP60R190S2, TSF65R190S2, TSP65R190S2, TSA65R190S2, AO4407A, TSF65R360S2, TSF840MD, TSF840MR, TSF9N90M, TSK80R240S1, TSK82N25M, TSP10N60M, TSF10N60M
Keywords - TSK65R190S2 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: LND5N65B
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