TSF9N90M Datasheet. Specs and Replacement
Type Designator: TSF9N90M 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
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TSF9N90M datasheet
tsf9n90m.pdf
TSF9N90M 900V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 9A,900V,Max.RDS(on)=1.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC) minimize on-state resistance, provide superior switching High ruggedness performance, and... See More ⇒
Detailed specifications: TSP60R190S2, TSF65R190S2, TSP65R190S2, TSA65R190S2, TSK65R190S2, TSF65R360S2, TSF840MD, TSF840MR, IRF730, TSK80R240S1, TSK82N25M, TSP10N60M, TSF10N60M, TSP10N65M, TSF10N65M, TSP12N60M, TSF12N60M
Keywords - TSF9N90M MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IRF9Z14SPBF | PDC3908Z | DTG050P06LA | SI6993DQ | IXTQ220N075T | IXTQ60N20T | IXTQ36N50P
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