TSF9N90M Spec and Replacement
Type Designator: TSF9N90M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
TSF9N90M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSF9N90M Specs
tsf9n90m.pdf
TSF9N90M 900V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 9A,900V,Max.RDS(on)=1.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC) minimize on-state resistance, provide superior switching High ruggedness performance, and... See More ⇒
Detailed specifications: TSP60R190S2 , TSF65R190S2 , TSP65R190S2 , TSA65R190S2 , TSK65R190S2 , TSF65R360S2 , TSF840MD , TSF840MR , IRF730 , TSK80R240S1 , TSK82N25M , TSP10N60M , TSF10N60M , TSP10N65M , TSF10N65M , TSP12N60M , TSF12N60M .
History: 2SK1288
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
