TSK80R240S1 MOSFET. Datasheet pdf. Equivalent
Type Designator: TSK80R240S1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 18.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27.5 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 380 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO247
TSK80R240S1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSK80R240S1 Datasheet (PDF)
..1. Size:636K truesemi
tsk80r240s1.pdf
tsk80r240s1.pdf
TSK80R240S1 800V 18.4A N-Channel SJ-MOSFET Features General Description 850V @TJ = 150 Typ. RDS(on) = 0.21 Truesemi SJ-FET is new generation of high voltage MOSFET family Ultra Low gate charge (typ. Qg = 27.5nC) that is utilizing an advanced charge balance mechanism for outstanding 100% avalanche tested low on-resistance and lower gate charge performanc
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