TSK80R240S1 PDF and Equivalents Search

 

TSK80R240S1 Specs and Replacement

Type Designator: TSK80R240S1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO247

TSK80R240S1 substitution

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TSK80R240S1 datasheet

 ..1. Size:636K  truesemi
 tsk80r240s1.pdf pdf_icon

TSK80R240S1

TSK80R240S1 800V 18.4A N-Channel SJ-MOSFET Features General Description 850V @TJ = 150 Typ. RDS(on) = 0.21 Truesemi SJ-FET is new generation of high voltage MOSFET family Ultra Low gate charge (typ. Qg = 27.5nC) that is utilizing an advanced charge balance mechanism for outstanding 100% avalanche tested low on-resistance and lower gate charge performanc... See More ⇒

Detailed specifications: TSF65R190S2, TSP65R190S2, TSA65R190S2, TSK65R190S2, TSF65R360S2, TSF840MD, TSF840MR, TSF9N90M, IRFZ44N, TSK82N25M, TSP10N60M, TSF10N60M, TSP10N65M, TSF10N65M, TSP12N60M, TSF12N60M, TSP12N65M

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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