All MOSFET. TSK80R240S1 Datasheet

 

TSK80R240S1 Datasheet and Replacement


   Type Designator: TSK80R240S1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO247
 

 TSK80R240S1 substitution

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TSK80R240S1 Datasheet (PDF)

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TSK80R240S1

TSK80R240S1 800V 18.4A N-Channel SJ-MOSFET Features General Description 850V @TJ = 150 Typ. RDS(on) = 0.21 Truesemi SJ-FET is new generation of high voltage MOSFET family Ultra Low gate charge (typ. Qg = 27.5nC) that is utilizing an advanced charge balance mechanism for outstanding 100% avalanche tested low on-resistance and lower gate charge performanc

Datasheet: TSF65R190S2 , TSP65R190S2 , TSA65R190S2 , TSK65R190S2 , TSF65R360S2 , TSF840MD , TSF840MR , TSF9N90M , IRFZ44N , TSK82N25M , TSP10N60M , TSF10N60M , TSP10N65M , TSF10N65M , TSP12N60M , TSF12N60M , TSP12N65M .

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