All MOSFET. TSK80R240S1 Datasheet

 

TSK80R240S1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSK80R240S1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 18.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27.5 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO247

 TSK80R240S1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSK80R240S1 Datasheet (PDF)

 ..1. Size:636K  truesemi
 tsk80r240s1.pdf

TSK80R240S1 TSK80R240S1

TSK80R240S1 800V 18.4A N-Channel SJ-MOSFET Features General Description 850V @TJ = 150 Typ. RDS(on) = 0.21 Truesemi SJ-FET is new generation of high voltage MOSFET family Ultra Low gate charge (typ. Qg = 27.5nC) that is utilizing an advanced charge balance mechanism for outstanding 100% avalanche tested low on-resistance and lower gate charge performanc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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