All MOSFET. TSK80R240S1 Datasheet

 

TSK80R240S1 Datasheet and Replacement


   Type Designator: TSK80R240S1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 18.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO247
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TSK80R240S1 Datasheet (PDF)

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TSK80R240S1

TSK80R240S1 800V 18.4A N-Channel SJ-MOSFET Features General Description 850V @TJ = 150 Typ. RDS(on) = 0.21 Truesemi SJ-FET is new generation of high voltage MOSFET family Ultra Low gate charge (typ. Qg = 27.5nC) that is utilizing an advanced charge balance mechanism for outstanding 100% avalanche tested low on-resistance and lower gate charge performanc

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT

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