All MOSFET. TSP10N60M Datasheet

 

TSP10N60M Datasheet and Replacement


   Type Designator: TSP10N60M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 162 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220
 

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TSP10N60M Datasheet (PDF)

 ..1. Size:1124K  truesemi
 tsp10n60m tsf10n60m.pdf pdf_icon

TSP10N60M

TSP10N60M/TSF10N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 10.0A,600V,Max.RDS(on)=0.8 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 48nC)minimize on-state resistance, provide superior switching High ruggednessperformance,

 7.1. Size:1254K  truesemi
 tsp10n65m tsf10n65m.pdf pdf_icon

TSP10N60M

TSP10N65M/TSF10N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 10.0A,650V,Max.RDS(on)=1.0 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 48nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a

Datasheet: TSA65R190S2 , TSK65R190S2 , TSF65R360S2 , TSF840MD , TSF840MR , TSF9N90M , TSK80R240S1 , TSK82N25M , IRF740 , TSF10N60M , TSP10N65M , TSF10N65M , TSP12N60M , TSF12N60M , TSP12N65M , TSF12N65M , TSP13N50M .

History: NTLUS4C12N | IPB80N04S4L-04

Keywords - TSP10N60M MOSFET datasheet

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