TSP10N60M MOSFET Datasheet: N-Ch, 600V, 10A. Full specification with pinout and replacement list

TSP10N60M Specs and Replacement

Type Designator: TSP10N60M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 162 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220

TSP10N60M substitution

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TSP10N60M datasheet

..1. Size:1124K truesemi
tsp10n60m tsf10n60m.pdf pdf_icon

TSP10N60M/TSF10N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 10.0A,600V,Max.RDS(on)=0.8 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 48nC) minimize on-state resistance, provide superior switching High ruggedness performance, ... See More ⇒

7.1. Size:1254K truesemi
tsp10n65m tsf10n65m.pdf pdf_icon

TSP10N65M/TSF10N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 10.0A,650V,Max.RDS(on)=1.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 48nC) minimize on-state resistance, provide superior switching High ruggedness performance, a... See More ⇒

Detailed specifications: TSA65R190S2, TSK65R190S2, TSF65R360S2, TSF840MD, TSF840MR, TSF9N90M, TSK80R240S1, TSK82N25M, IRF740, TSF10N60M, TSP10N65M, TSF10N65M, TSP12N60M, TSF12N60M, TSP12N65M, TSF12N65M, TSP13N50M