All MOSFET. TSP10N60M Datasheet

 

TSP10N60M MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSP10N60M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 162 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220

 TSP10N60M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSP10N60M Datasheet (PDF)

 ..1. Size:1124K  truesemi
 tsp10n60m tsf10n60m.pdf

TSP10N60M TSP10N60M

TSP10N60M/TSF10N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 10.0A,600V,Max.RDS(on)=0.8 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 48nC)minimize on-state resistance, provide superior switching High ruggednessperformance,

 7.1. Size:1254K  truesemi
 tsp10n65m tsf10n65m.pdf

TSP10N60M TSP10N60M

TSP10N65M/TSF10N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 10.0A,650V,Max.RDS(on)=1.0 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 48nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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