TSP10N65M PDF and Equivalents Search

 

TSP10N65M Specs and Replacement

Type Designator: TSP10N65M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 162 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220

TSP10N65M substitution

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TSP10N65M datasheet

 ..1. Size:1254K  truesemi
 tsp10n65m tsf10n65m.pdf pdf_icon

TSP10N65M

TSP10N65M/TSF10N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 10.0A,650V,Max.RDS(on)=1.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 48nC) minimize on-state resistance, provide superior switching High ruggedness performance, a... See More ⇒

 7.1. Size:1124K  truesemi
 tsp10n60m tsf10n60m.pdf pdf_icon

TSP10N65M

TSP10N60M/TSF10N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 10.0A,600V,Max.RDS(on)=0.8 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 48nC) minimize on-state resistance, provide superior switching High ruggedness performance, ... See More ⇒

Detailed specifications: TSF65R360S2, TSF840MD, TSF840MR, TSF9N90M, TSK80R240S1, TSK82N25M, TSP10N60M, TSF10N60M, 20N60, TSF10N65M, TSP12N60M, TSF12N60M, TSP12N65M, TSF12N65M, TSP13N50M, TSF13N50M, TSP4N60M

Keywords - TSP10N65M MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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