TSF12N60M Specs and Replacement
Type Designator: TSF12N60M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO220F
TSF12N60M substitution
- MOSFET ⓘ Cross-Reference Search
TSF12N60M datasheet
tsp12n60m tsf12n60m.pdf
TSP12N60M/TSF12N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 12A,600V,Max.RDS(on)=0.7 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC) minimize on-state resistance, provide superior switching High ruggedness performance, an... See More ⇒
tsp12n65m tsf12n65m.pdf
TSP12N65M/TSF12N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 12A,650V,Max.RDS(on)=0.75 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC) minimize on-state resistance, provide superior switching High ruggedness performance, a... See More ⇒
Detailed specifications: TSF9N90M, TSK80R240S1, TSK82N25M, TSP10N60M, TSF10N60M, TSP10N65M, TSF10N65M, TSP12N60M, 50N06, TSP12N65M, TSF12N65M, TSP13N50M, TSF13N50M, TSP4N60M, TSF4N60M, TSP5N65M, TSF5N65M
Keywords - TSF12N60M MOSFET specs
TSF12N60M cross reference
TSF12N60M equivalent finder
TSF12N60M pdf lookup
TSF12N60M substitution
TSF12N60M replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: N0301N | TSF12N65M
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