All MOSFET. TSF12N60M Datasheet

 

TSF12N60M Datasheet and Replacement


   Type Designator: TSF12N60M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO220F
 

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TSF12N60M Datasheet (PDF)

 ..1. Size:1165K  truesemi
 tsp12n60m tsf12n60m.pdf pdf_icon

TSF12N60M

TSP12N60M/TSF12N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 12A,600V,Max.RDS(on)=0.7 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 52nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an

 7.1. Size:1088K  truesemi
 tsp12n65m tsf12n65m.pdf pdf_icon

TSF12N60M

TSP12N65M/TSF12N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 12A,650V,Max.RDS(on)=0.75 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 52nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a

Datasheet: TSF9N90M , TSK80R240S1 , TSK82N25M , TSP10N60M , TSF10N60M , TSP10N65M , TSF10N65M , TSP12N60M , 50N06 , TSP12N65M , TSF12N65M , TSP13N50M , TSF13N50M , TSP4N60M , TSF4N60M , TSP5N65M , TSF5N65M .

History: HMS35DN10DA | EKI06051

Keywords - TSF12N60M MOSFET datasheet

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