TSP13N50M PDF and Equivalents Search

 

TSP13N50M Specs and Replacement

Type Designator: TSP13N50M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 195 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: TO220

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TSP13N50M datasheet

 ..1. Size:1269K  truesemi
 tsp13n50m tsf13n50m.pdf pdf_icon

TSP13N50M

TSP13N50M/TSF13N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 13A,500V,Max.RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC) minimize on-state resistance, provide superior switching High ruggedness perfo... See More ⇒

Detailed specifications: TSP10N60M, TSF10N60M, TSP10N65M, TSF10N65M, TSP12N60M, TSF12N60M, TSP12N65M, TSF12N65M, IRF640, TSF13N50M, TSP4N60M, TSF4N60M, TSP5N65M, TSF5N65M, TSP740MR, TSF740MR, TSP7N60M

Keywords - TSP13N50M MOSFET specs

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