All MOSFET. TSP13N50M Datasheet

 

TSP13N50M Datasheet and Replacement


   Type Designator: TSP13N50M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO220
 

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TSP13N50M Datasheet (PDF)

 ..1. Size:1269K  truesemi
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TSP13N50M

TSP13N50M/TSF13N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 13A,500V,Max.RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC)minimize on-state resistance, provide superior switching High ruggednessperfo

Datasheet: TSP10N60M , TSF10N60M , TSP10N65M , TSF10N65M , TSP12N60M , TSF12N60M , TSP12N65M , TSF12N65M , IRFZ44 , TSF13N50M , TSP4N60M , TSF4N60M , TSP5N65M , TSF5N65M , TSP740MR , TSF740MR , TSP7N60M .

History: BUK7Y153-100E | VS4620GS | FDD9410-F085 | OSG65R200PF | NCEP02580F | BUK7Y12-40E | MMFT60R290PTH

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