TSP4N60M PDF and Equivalents Search

 

TSP4N60M Specs and Replacement

Type Designator: TSP4N60M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO220

TSP4N60M substitution

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TSP4N60M datasheet

 ..1. Size:1096K  truesemi
 tsp4n60m tsf4n60m.pdf pdf_icon

TSP4N60M

TSP4N60M/TSF4N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness performance, and... See More ⇒

Detailed specifications: TSP10N65M, TSF10N65M, TSP12N60M, TSF12N60M, TSP12N65M, TSF12N65M, TSP13N50M, TSF13N50M, IRLZ44N, TSF4N60M, TSP5N65M, TSF5N65M, TSP740MR, TSF740MR, TSP7N60M, TSF7N60M, TSP7N65M

Keywords - TSP4N60M MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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