All MOSFET. TSP4N60M Datasheet

 

TSP4N60M Datasheet and Replacement


   Type Designator: TSP4N60M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220
 

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TSP4N60M Datasheet (PDF)

 ..1. Size:1096K  truesemi
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TSP4N60M

TSP4N60M/TSF4N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

Datasheet: TSP10N65M , TSF10N65M , TSP12N60M , TSF12N60M , TSP12N65M , TSF12N65M , TSP13N50M , TSF13N50M , IRFP260N , TSF4N60M , TSP5N65M , TSF5N65M , TSP740MR , TSF740MR , TSP7N60M , TSF7N60M , TSP7N65M .

History: CEC8218 | RU75150R | 2SK3109-AZ | HRLF110N03K | KF9N50P | WSD30160DN56 | RU6H2R

Keywords - TSP4N60M MOSFET datasheet

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