All MOSFET. TSP4N60M Datasheet

 

TSP4N60M MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSP4N60M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220

 TSP4N60M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSP4N60M Datasheet (PDF)

 ..1. Size:1096K  truesemi
 tsp4n60m tsf4n60m.pdf

TSP4N60M TSP4N60M

TSP4N60M/TSF4N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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