All MOSFET. TSF4N60M Datasheet

 

TSF4N60M Datasheet and Replacement


   Type Designator: TSF4N60M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220F
 

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TSF4N60M Datasheet (PDF)

 ..1. Size:1096K  truesemi
 tsp4n60m tsf4n60m.pdf pdf_icon

TSF4N60M

TSP4N60M/TSF4N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

 9.1. Size:1591K  truesemi
 tsf4n90m.pdf pdf_icon

TSF4N60M

TSF4N90M900V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis Drain-Source breakdown voltage:advanced planar stripe DMOS technology.BVDSS=900V (Min.)This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Low gate charge: Qg=22nC (Typ.)performance, and withstand high

Datasheet: TSF10N65M , TSP12N60M , TSF12N60M , TSP12N65M , TSF12N65M , TSP13N50M , TSF13N50M , TSP4N60M , IRF640N , TSP5N65M , TSF5N65M , TSP740MR , TSF740MR , TSP7N60M , TSF7N60M , TSP7N65M , TSF7N65M .

History: SM6008NF | DH045N06E | 2SK1813 | HAT2174N

Keywords - TSF4N60M MOSFET datasheet

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