All MOSFET. TSF4N60M Datasheet

 

TSF4N60M MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSF4N60M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220F

 TSF4N60M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSF4N60M Datasheet (PDF)

 ..1. Size:1096K  truesemi
 tsp4n60m tsf4n60m.pdf

TSF4N60M TSF4N60M

TSP4N60M/TSF4N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

 9.1. Size:1591K  truesemi
 tsf4n90m.pdf

TSF4N60M TSF4N60M

TSF4N90M900V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis Drain-Source breakdown voltage:advanced planar stripe DMOS technology.BVDSS=900V (Min.)This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Low gate charge: Qg=22nC (Typ.)performance, and withstand high

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SFP9Z24

 

 
Back to Top