TSF4N60M MOSFET. Datasheet pdf. Equivalent
Type Designator: TSF4N60M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220F
TSF4N60M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSF4N60M Datasheet (PDF)
tsp4n60m tsf4n60m.pdf
TSP4N60M/TSF4N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
tsf4n90m.pdf
TSF4N90M900V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis Drain-Source breakdown voltage:advanced planar stripe DMOS technology.BVDSS=900V (Min.)This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Low gate charge: Qg=22nC (Typ.)performance, and withstand high
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
