TSF4N60M MOSFET Datasheet: N-Ch, 600V, 4A. Full specification with pinout and replacement list

TSF4N60M Specs and Replacement

Type Designator: TSF4N60M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO220F

TSF4N60M substitution

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TSF4N60M datasheet

..1. Size:1096K truesemi
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TSP4N60M/TSF4N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness performance, and... See More ⇒

9.1. Size:1591K truesemi
tsf4n90m.pdf pdf_icon

TSF4N90M 900V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s Drain-Source breakdown voltage advanced planar stripe DMOS technology. BVDSS=900V (Min.) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Low gate charge Qg=22nC (Typ.) performance, and withstand high ... See More ⇒

Detailed specifications: TSF10N65M, TSP12N60M, TSF12N60M, TSP12N65M, TSF12N65M, TSP13N50M, TSF13N50M, TSP4N60M, IRFB4110, TSP5N65M, TSF5N65M, TSP740MR, TSF740MR, TSP7N60M, TSF7N60M, TSP7N65M, TSF7N65M