All MOSFET. TSP840MR Datasheet

 

TSP840MR Datasheet and Replacement


   Type Designator: TSP840MR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220
 

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TSP840MR Datasheet (PDF)

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TSP840MR

TSP840MR/TSF840MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 9.0A,500V,Max.RDS(on)=0.80 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC)minimize on-state resistance, provide superior switching High ruggednessperfor

Datasheet: TSP740MR , TSF740MR , TSP7N60M , TSF7N60M , TSP7N65M , TSF7N65M , TSP7N80M , TSF7N80M , 2SK3878 , TSP8N65M , TSF8N65M , YJB150G06AK , YJB150N06BQ , YJB200G06B , YJD15N10A , YJD18GP10A , YJD20N06A .

History: ME7807S | SVS70R600MJE3 | WFU1N60 | SSF2610E | FIR2N65AFG | TPCA8027-H | APG077N01G

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