TSP840MR Specs and Replacement

Type Designator: TSP840MR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220

TSP840MR substitution

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TSP840MR datasheet

 ..1. Size:661K  truesemi
 tsp840mr tsf840mr.pdf pdf_icon

TSP840MR

TSP840MR/TSF840MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 9.0A,500V,Max.RDS(on)=0.80 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC) minimize on-state resistance, provide superior switching High ruggedness perfor... See More ⇒

Detailed specifications: TSP740MR, TSF740MR, TSP7N60M, TSF7N60M, TSP7N65M, TSF7N65M, TSP7N80M, TSF7N80M, 8205A, TSP8N65M, TSF8N65M, YJB150G06AK, YJB150N06BQ, YJB200G06B, YJD15N10A, YJD18GP10A, YJD20N06A

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